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1. product profile 1.1 general description a 35 w ldmos rf power transistor for broadc ast transmitter and industrial applications. the transistor is suitable for the frequency range hf to 1400 mhz. the excellent ruggedness and broadband performance of this device makes it ideal for digital applications. 1.2 features and benefits ? cw performance at 1300 mhz, a drain-source voltage v ds of 32 v and a quiescent drain current i dq =0.2a : ? average output power = 35 w ? power gain = 19 db ? drain efficiency = 63 % ? 2-tone performance at 1300 mhz, a drain-source voltage v ds of 32 v and a quiescent drain current i dq =0.2a : ? average output power = 17.5 w ? power gain = 19 db ? drain efficiency = 48 % ? intermodulation distortion = ? 28 dbc ? integrated esd protection ? excellent ruggedness ? high power gain ? high efficiency ? excellent reliability ? easy power control ? compliant to directive 2002/ 95/ec, regarding restriction of hazardous substances (rohs) BLF642 broadband power ldmos transistor rev. 2 ? 22 july 2011 product data sheet table 1. typical performance rf performance at t h = 25 ? c in a common source test circuit. mode of operation f v ds p l g p ? d imd (mhz) (v) (w) (db) (%) (dbc) cw, class-ab 1300 32 35 19 63 - 2-tone, class-ab 1300 32 17.5 19 48 ? 28
BLF642 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 2 ? 22 july 2011 2 of 12 nxp semiconductors BLF642 broadband power ldmos transistor 1.3 applications ? communication transmitter applications in the hf to 1400 mhz frequency range ? industrial applications in the hf to 1400 mhz frequency range 2. pinning information [1] connected to flange 3. ordering information 4. limiting values 5. thermal characteristics [1] r th(j-c) is measured under rf conditions. table 2. pinning pin description simplified outline graphic symbol 1drain 2gate 3source [1] 1 2 3 sym112 1 3 2 table 3. ordering information type number package name description version BLF642 - flanged ldmost ceramic package; 2 mounting holes; 2 leads sot467c table 4. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source voltage - 65 v v gs gate-source voltage ? 0.5 +11 v t stg storage temperature ? 65 +150 ?c t j junction temperature - 200 ?c table 5. thermal characteristics symbol parameter conditions typ unit r th(j-c) thermal resistance from junction to case t case = 80 ?c; p l = 35 w [1] 1.6 k/w
BLF642 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 2 ? 22 july 2011 3 of 12 nxp semiconductors BLF642 broadband power ldmos transistor 6. characteristics 7. application information 7.1 ruggedness in class-ab operation the BLF642 is capable of withstanding a load mismatch corresponding to vswr = 10 : 1 through all phases under the following conditions: v ds = 32 v; f = 1300 mhz at rated load power. table 6. characteristics per section t j = 25 ? c; unless otherwise specified. symbol parameter conditions min typ max unit v (br)dss drain-source breakdown voltage v gs =0v; i d =0.5ma 65 - - v v gs(th) gate-source threshold voltage v ds = 32 v; i d = 50 ma 1.4 1.9 2.4 v v gsq gate-source quiescent voltage v ds =32v; i dq = 250 ma 1.5 2.0 2.5 v i dss drain leakage current v gs =0v; v ds =32v - - 1.4 ? a i dsx drain cut-off current v gs =v gs(th) + 3.75 v; v ds =10v 8.0 9.0 - a i gss gate leakage current v gs = ? 10 v; v ds =0v - - 50 na g fs forward transconductance v ds =10v; i d = 2.5 a - 3.3 - s r ds(on) drain-source on-state resistance v gs =v gs(th) + 3.75 v; i d =1.75a -300- m ? c iss input capacitance v gs = 0 v; v ds =32v; f=1mhz -39- pf c oss output capacitance v gs = 0 v; v ds =32v; f=1mhz -15- pf c rs feedback capacitance v gs = 0 v; v ds =32v; f=1mhz -0.84- pf table 7. rf performance in a common-source class-ab circuit t h =25 ? c; i dq = 0.2 a. mode of operation f v ds p l g p ? d (mhz) (v) (w) (db) (%) cw, class-ab 1300 32 35 > 18 > 59
BLF642 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 2 ? 22 july 2011 4 of 12 nxp semiconductors BLF642 broadband power ldmos transistor 8. test information 8.1 rf performance the following figures are measured in a class-ab production test circuit. 8.1.1 1-tone cw v ds = 32 v; i dq = 200 ma; f = 1300 mhz. v ds = 32 v; f = 1300 mhz. (1) i dq = 50 ma (2) i dq = 100 ma (3) i dq = 150 ma (4) i dq = 200 ma (5) i dq = 250 ma (6) i dq = 300 ma (7) i dq = 350 ma fig 1. power gain and drain efficiency as function of load power; typical values fig 2. power gain as a function of load power; typical values p l (w) 050 40 20 30 10 001aan775 40 20 60 80 d (%) 0 d 18 16 20 22 g p (db) g p 14 p l (w) 05 0 40 20 30 10 001aan776 (1) (2) (3) (4) (5) (6) (7) 18 16 20 22 g p (db) 14
BLF642 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 2 ? 22 july 2011 5 of 12 nxp semiconductors BLF642 broadband power ldmos transistor 8.1.2 2-tone cw 8.1.3 pulsed cw v ds = 32 v; i dq = 200 ma; f = 1300 mhz; carrier spacing = 100 khz. v ds = 32 v; f = 1300 mhz; carrier spacing = 100 khz. (1) i dq = 50 ma (2) i dq = 100 ma (3) i dq = 150 ma (4) i dq = 200 ma (5) i dq = 250 ma (6) i dq = 300 ma (7) i dq = 350 ma fig 3. power gain and drain efficiency as function of average load power; typical values fig 4. third order intermodulation distortion as a function of average load power; typical values 001aan777 p l(av) (w) 030 20 10 19 18 20 21 g p (db) 17 40 20 60 80 d (%) 0 d g p p l(av) (w) 030 20 10 001aan778 -40 -20 0 imd3 (dbc) -60 (7) (6) (5) (4) (3) (2) (1) v ds = 32 v; i dq = 200 ma; f = 1300 mhz fig 5. power gain and drain efficiency as a function of average power; typical values p l (w) 050 40 20 30 10 001aao319 18 16 20 22 g p (db) g p d (%) d 14 40 20 60 80 0
BLF642 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 2 ? 22 july 2011 6 of 12 nxp semiconductors BLF642 broadband power ldmos transistor 8.1.4 dvb-t 8.2 test circuit v ds = 32 v; i dq = 200 ma; f = 1300 mhz. v ds = 32 v; i dq = 200 ma; f = 1300 mhz. fig 6. power gain and drain efficiency as function of average load power; typical values fig 7. par and imd shldr as function of average load power; typical values p l(av) (w) 025 20 10 15 5 001aao321 18 19 20 g p (db) d (%) 17 20 40 60 0 d g p p l(av) (w) 025 20 10 15 5 001aao320 -40 -20 0 imd shldr (dbc) par (db) -60 4 8 12 0 imd shldr par see table 8 for a list of components. fig 8. component layout for class-ab amplifier 001aao322 + - + - c2 c3 c5 c6 c11 c18 c20 c13 c14 c15 c16 c17 c12 c19 c4 r1 c1 BLF642 28.4 mm 40 mm 5.9 mm 6 mm 10.3 mm 24.4 mm 37.7 mm
BLF642 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 2 ? 22 july 2011 7 of 12 nxp semiconductors BLF642 broadband power ldmos transistor [1] american technical ce ramics type 100b or capacitor of same quality. [2] american technical ce ramics type 100a or capacitor of same quality. [3] tdk c570x7r1h106kt000n or capacitor of same quality. table 8. list of components for production test circuit, see figure 8 . printed-circuit board (pcb): rogers 5880; ? r = 2.2; height = 0.762 mm; copper (top/bottom metallization); thickness copper plating = 35 ? m. component description value remarks c1 multilayer ceramic chip capacitor 22 pf [1] c2 multilayer ceramic chip capacitor 5.1 pf [2] c3 multilayer ceramic chip capacitor 4.3 pf [2] c4 multilayer ceramic chip capacitor 10 pf [2] c5 electrolytic chip capacitor 10 ? f; 50 v c6 multilayer ceramic chip capacitor 22 nf c11, c12 multilayer cera mic chip capacitor 22 pf [1] c13, c14 multilayer cerami c chip capacitor 6.2 pf [1] c15 multilayer ceramic chip capacitor 4.3 pf [1] c16 multilayer ceramic chip capacitor 1.2 pf [1] c17 multilayer ceramic chip capacitor 22 pf [1] c18, c19 multilayer cera mic chip capacitor 10 ? f [3] c20 electrolytic capacitor 470 ? f; 63 v r1 wire resistor 100 ?
BLF642 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 2 ? 22 july 2011 8 of 12 nxp semiconductors BLF642 broadband power ldmos transistor 9. package outline fig 9. package outline sot467c references outline version european projection issue date iec jedec eiaj sot467c 99-12-06 99-12-28 0 5 10 mm scale flanged ldmost ceramic package; 2 mounting holes; 2 leads 0.15 0.10 5.59 5.33 9.25 9.04 1.65 1.40 18.54 17.02 dimensions (millimetre dimensions are derived from the original inch dimensions) 3.43 3.18 4.67 3.94 2.21 1.96 d d 1 u 1 1 3 2 a u 2 e e 1 p b h q f c unit q cd 9.27 9.02 d 1 5.92 5.77 e 5.97 5.72 e 1 fh p q mm 0.184 0.155 inch b 14.27 20.45 20.19 u 2 u 1 5.97 5.72 0.25 w 1 0.51 0.006 0.004 0.220 0.210 0.364 0.356 0.065 0.055 0.73 0.67 0.135 0.125 0.087 0.077 0.365 0.355 0.233 0.227 0.235 0.225 0.562 0.805 0.795 0.235 0.225 0.010 0.020 w 2 a m m c c a w 1 w 2 ab m m m q b sot467c
BLF642 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 2 ? 22 july 2011 9 of 12 nxp semiconductors BLF642 broadband power ldmos transistor 10. abbreviations 11. revision history table 9. abbreviations acronym description cw continuous waveform dvb-t digital video broadcast - terrestrial esd electrostatic discharge hf high frequency ldmos laterally diffused metal oxide semiconductor ldmost laterally diffused metal-oxide semiconductor transistor par peak-to-average power ratio rf radio frequency vswr voltage standing-wave ratio table 10. revision history document id release date data sheet status change notice supersedes BLF642 v.2 20110722 product data sheet - BLF642 v.1 modifications: ? the status of this data sheet has been changed to product data sheet ? table 5 on page 2 : the value for r th(j-c) has been changed. ? table 6 on page 3 : some values have been changed. ? section 8.1.3 on page 5 : section has been added. ? section 8.1.4 on page 6 : section has been added. ? section 8.2 on page 6 : section has been added. BLF642 v.1 20110308 objective data sheet - -
BLF642 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 2 ? 22 july 2011 10 of 12 nxp semiconductors BLF642 broadband power ldmos transistor 12. legal information 12.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term ?short data sheet? is explained in section ?definitions?. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple device s. the latest product status information is available on the internet at url http://www.nxp.com . 12.2 definitions draft ? the document is a draft versi on only. the content is still under internal review and subject to formal approval, which may result in modifications or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall hav e no liability for the consequences of use of such information. short data sheet ? a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request vi a the local nxp semiconductors sales office. in case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. product specification ? the information and data provided in a product data sheet shall define the specification of the product as agreed between nxp semiconductors and its customer , unless nxp semiconductors and customer have explicitly agreed otherwis e in writing. in no event however, shall an agreement be valid in which the nxp semiconductors product is deemed to offer functions and qualities beyond those described in the product data sheet. 12.3 disclaimers limited warranty and liability ? information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. in no event shall nxp semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. notwithstanding any damages that customer might incur for any reason whatsoever, nxp semiconductors? aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the terms and conditions of commercial sale of nxp semiconductors. right to make changes ? nxp semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use ? nxp semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors accepts no liability for inclusion and/or use of nxp semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer?s own risk. applications ? applications that are described herein for any of these products are for illustrative purpos es only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. customers are responsible for the design and operation of their applications and products using nxp semiconductors products, and nxp semiconductors accepts no liability for any assistance with applications or customer product design. it is customer?s sole responsibility to determine whether the nxp semiconductors product is suitable and fit for the customer?s applications and products planned, as well as fo r the planned application and use of customer?s third party customer(s). customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. nxp semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer?s applications or products, or the application or use by customer?s third party customer(s). customer is responsible for doing all necessary testing for the customer?s applic ations and products using nxp semiconductors products in order to av oid a default of the applications and the products or of the application or use by customer?s third party customer(s). nxp does not accept any liability in this respect. limiting values ? stress above one or more limiting values (as defined in the absolute maximum ratings system of iec 60134) will cause permanent damage to the device. limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the recommended operating conditions section (if present) or the characteristics sections of this document is not warranted. constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. terms and conditions of commercial sale ? nxp semiconductors products are sold subject to the gener al terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms , unless otherwise agreed in a valid written individual agreement. in case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. nxp semiconductors hereby expressly objects to applying the customer?s general terms and conditions with regard to the purchase of nxp semiconducto rs products by customer. no offer to sell or license ? nothing in this document may be interpreted or construed as an offer to sell products t hat is open for acceptance or the grant, conveyance or implication of any lic ense under any copyrights, patents or other industrial or intellectual property rights. export control ? this document as well as the item(s) described herein may be subject to export control regulations. export might require a prior authorization from national authorities. document status [1] [2] product status [3] definition objective [short] data sheet development this document contains data from the objecti ve specification for product development. preliminary [short] data sheet qualification this document contains data from the preliminary specification. product [short] data sheet production this document contains the product specification.
BLF642 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 2 ? 22 july 2011 11 of 12 nxp semiconductors BLF642 broadband power ldmos transistor non-automotive qualified products ? unless this data sheet expressly states that this specific nxp semicon ductors product is automotive qualified, the product is not suitable for automotive use. it is neither qualified nor tested in accordance with automotive testing or application requirements. nxp semiconductors accepts no liabili ty for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. in the event that customer uses t he product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without nxp semiconductors? warranty of the product for such automotive applicat ions, use and specifications, and (b) whenever customer uses the product for automotive applications beyond nxp semiconductors? specifications such use shall be solely at customer?s own risk, and (c) customer fully in demnifies nxp semi conductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive appl ications beyond nxp semiconductors? standard warranty and nxp semicond uctors? product specifications. 12.4 licenses 12.5 trademarks notice: all referenced brands, produc t names, service names and trademarks are the property of their respective owners. 13. contact information for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com ics with dvb-t or dvb-t2 functionality use of this product in any manner that complies with the dvb-t or the dvb-t2 standard may require licenses under applicable patents of the dvb-t respectively the dvb-t2 patent portfolio, which license is available from sisvel s.p.a., via sestriere 100, 10060 none (to), italy, and under applicable patents of other parties.
nxp semiconductors BLF642 broadband power ldmos transistor ? nxp b.v. 2011. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please se nd an email to: salesaddresses@nxp.com date of release: 22 july 2011 document identifier: BLF642 please be aware that important notices concerning this document and the product(s) described herein, have been included in section ?legal information?. 14. contents 1 product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 general description . . . . . . . . . . . . . . . . . . . . . 1 1.2 features and benefits . . . . . . . . . . . . . . . . . . . . 1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 2 pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 thermal characteristics . . . . . . . . . . . . . . . . . . 2 6 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 7 application information. . . . . . . . . . . . . . . . . . . 3 7.1 ruggedness in class-ab operation . . . . . . . . . 3 8 test information . . . . . . . . . . . . . . . . . . . . . . . . . 4 8.1 rf performance . . . . . . . . . . . . . . . . . . . . . . . . 4 8.1.1 1-tone cw . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 8.1.2 2-tone cw . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 8.1.3 pulsed cw . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 8.1.4 dvb-t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 8.2 test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 9 package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 10 abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 11 revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9 12 legal information. . . . . . . . . . . . . . . . . . . . . . . 10 12.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . 10 12.2 definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 12.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 12.4 licenses . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 12.5 trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11 13 contact information. . . . . . . . . . . . . . . . . . . . . 11 14 contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

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